MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET

被引：25

作者：

AWANO, Y ^{[1
]}

TOMIZAWA, K ^{[1
]}

HASHIZUME, N ^{[1
]}

KAWASHIMA, M ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 01期

关键词：

D O I：

10.1049/el:19830014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：20 / 21

页数：2

共 9 条

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[7]

TOMIZAWA K, 1982, 1 IEE P SOL STAT EL, V129, P131

[8]

WARRINER RA, 1977, SOLID STATE ELECTRON, V1, P105

[9] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J].

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ELECTRONICS LETTERS, 1982, 18 (03) :119-121

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