THE EFFECT OF LOW-TEMPERATURE ANNEALING ON DEFECTS, IMPURITIES, AND ELECTRICAL-PROPERTIES OF (HG,CD)TE

被引：82

作者：

SCHAAKE, HF

TREGILGAS, JH

BECK, JD

KINCH, MA

GNADE, BE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573186

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：143 / 149

页数：7

共 20 条

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