SPIN-DEPENDENT DLTS OF SI-SIO2 INTERFACE STATES

被引：0
|
作者：
LANG, DV [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C351 / C351
页数：1
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