ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V-COMPOUND SEMICONDUCTORS - DETERMINATION BY TOTAL-ENERGY MINIMIZATION AND ELASTIC LOW-ENERGY ELECTRON-DIFFRACTION

被引：20
作者：
DUKE, CB
MAILHIOT, C
PATON, A
CHADI, DJ
KAHN, A
机构：
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
[2] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
关键词：
D O I：
10.1116/1.583057
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1087 / 1088
页数：2
相关论文
共 17 条
[1]   RECONSTRUCTION AND OXIDATION OF THE GAAS(110) SURFACE [J].
BARTON, JJ ;
GODDARD, WA ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1178-1185
[2]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[3]   ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065
[4]   RECONSTRUCTION OF THE (110) SURFACES FOR III-V SEMICONDUCTORS - 5 SYSTEMS INVOLVING INDIUM OR SB [J].
CHANG, R ;
GODDARD, WA .
SURFACE SCIENCE, 1984, 144 (2-3) :311-320
[5]   THE ATOMIC GEOMETRY OF GAAS(110) REVISITED [J].
DUKE, CB ;
RICHARDSON, SL ;
PATON, A ;
KAHN, A .
SURFACE SCIENCE, 1983, 127 (02) :L135-L143
[6]   STRUCTURAL CHEMISTRY OF THE CLEAVAGE FACES OF COMPOUND SEMICONDUCTORS [J].
DUKE, CB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :732-735
[7]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM A1 ON GAP(110) - THE HIGH-COVERAGE A1P(110) LIMIT [J].
DUKE, CB ;
PATON, A ;
KAHN, A ;
BONAPACE, CR .
PHYSICAL REVIEW B, 1983, 28 (02) :852-859
[8]  
DUKE CB, 1983, ADV CERAM, V6, P1
[9]   THEORETICAL STUDIES OF SI AND GAAS SURFACES AND INITIAL STEPS IN OXIDATION [J].
GODDARD, WA ;
BARTON, JJ ;
REDONDO, A ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1274-1286
[10]   SEMICONDUCTOR SURFACE STRUCTURES [J].
Kahn, A. .
SURFACE SCIENCE REPORTS, 1983, 3 (4-5) :193-300
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