IMPROVEMENTS IN THE TOPOGRAPHY OF AUGENI-BASED OHMIC CONTACTS TO N-GAAS

被引:21
作者
BALL, RK
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10.1016/0040-6090(89)90363-5
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T [工业技术];
学科分类号
08 ;
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页码:55 / 68
页数:14
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[1]   THE FORMATION OF TITANIUM, CHROMIUM, NIOBIUM AND ZIRCONIUM ALUMINIDES IN THIN-FILMS FOR INTERCONNECTIONS [J].
BALL, RK ;
TODD, AG .
THIN SOLID FILMS, 1987, 149 (03) :269-282
[2]   OHMIC CONTACTS TO GAAS [J].
BRASLAU, N .
THIN SOLID FILMS, 1983, 104 (3-4) :391-397
[3]   UNIFORM AND THERMALLY STABLE AUGENI OHMIC CONTACTS TO GAAS [J].
CALLEGARI, A ;
PAN, ETS ;
MURAKAMI, M .
APPLIED PHYSICS LETTERS, 1985, 46 (12) :1141-1143
[4]   SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J].
CHRISTOU, A .
SOLID-STATE ELECTRONICS, 1979, 22 (02) :141-&
[5]   REDISTRIBUTION OF ALUMINUM IN MODFET OHMIC CONTACTS [J].
CHRISTOU, A ;
PAPANICOLAOU, N .
SOLID-STATE ELECTRONICS, 1986, 29 (02) :189-192
[6]   STRUCTURAL-ANALYSIS OF AU-NI-GE AND AU-AG-GE ALLOYED OHMIC CONTACTS ON MODULATION-DOPED ALGAAS-GAAS HETEROSTRUCTURES [J].
HIGMAN, TK ;
EMANUEL, MA ;
COLEMAN, JJ ;
JENG, SJ ;
WAYMAN, CM .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :677-680
[7]   BARRIER HEIGHT REDUCTION IN AU-GE SCHOTTKY CONTACTS TO N-TYPE GAAS [J].
ILIADIS, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1340-1345
[8]   EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ITO, H ;
ISHIBASHI, T ;
SUGETA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L635-L637
[9]   INSITU X-RAY-DIFFRACTION STUDY OF THE EFFECTS OF GERMANIUM AND NICKEL CONCENTRATIONS ON MELTING IN GOLD-BASED CONTACTS TO GALLIUM-ARSENIDE [J].
KIM, T ;
CHUNG, DDL .
THIN SOLID FILMS, 1987, 147 (02) :177-192
[10]   ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J].
KUAN, TS ;
BATSON, PE ;
JACKSON, TN ;
RUPPRECHT, H ;
WILKIE, EL .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6952-6957