PHOTOLUMINESCENCE STUDY OF EXCITONS LOCALIZED IN INDIRECT-GAP GAAS1-XPX

被引：27
作者：
LAI, ST
KLEIN, MV
机构：
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT LAB,URBANA,IL 61801
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.29.3217
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3217 / 3224
页数：8
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