NATURE OF INCLUSIONS IN HEAVILY TELLURIUM-DOPED GALLIUM-ARSENIDE

被引：5

作者：

HUTCHINSON, PW

BASTOW, BD

机构：

[1] UNIV BIRMINGHAM, DEPT PHYS MET & SCI MAT, BIRMINGHAM, ENGLAND

[2] UNIV MANCHESTER, INST SCI & TECHNOL, CORROSION & PROTECTION CTR, MANCHESTER, ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1974年 / 9卷 / 09期

关键词：

D O I：

10.1007/BF00552934

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1483 / 1492

页数：10

共 17 条

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[7]

HUTCHINSON PW, TO BE PUBLISHED

[8] INVESTIGATION OF MICROPRECIPITATES IN HIGHLY TE-DOPED GAAS CRYSTALS [J].

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[9] SOME OBSERVATIONS OF LARGE IMPERFECTIONS IN HIGHLY TE-DOPED GAAS CRYSTALS [J].

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[10] Stacking-Faults in Tellurium-Doped Gallium Arsenide [J].

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