A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS

被引：38
作者：
KOBAYASHI, KLI
UCHIDA, Y
NAKASHIMA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 12期
关键词：
D O I：
10.1143/JJAP.24.L928
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L928 / L931
页数：4
相关论文
共 10 条
[1]  
ALTARELLI M, 1981, J PHYS SOC JAPAN SA, V49, P169
[2]   ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J].
BABA, T ;
MIZUTANI, T ;
OGAWA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L627-L629
[3]   INFLUENCE OF MBE GROWTH-CONDITIONS ON PERSISTENT PHOTOCONDUCTIVITY EFFECTS IN N-ALGAAS AND SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES [J].
ISHIKAWA, T ;
KONDO, K ;
HIYAMIZU, S ;
SHIBATOMI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L408-L410
[4]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[5]  
LANG DV, 1979, I PHYS C SER, V43, P433
[6]   DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].
MIZUTA, M ;
TACHIKAWA, M ;
KUKIMOTO, H ;
MINOMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146
[7]   LOCAL-MODE ABSORPTION AND DEFECTS IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].
SPITZER, WG ;
ALLRED, W .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :4999-&
[8]  
UCHIDA Y, 1985, UNPUB 12TH P INT S G
[9]   DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE [J].
WATANABE, MO ;
MORIZUKA, K ;
MASHITA, M ;
ASHIZAWA, Y ;
ZOHTA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L103-L105
[10]   INFLUENCE OF GROWTH-CONDITIONS AND ALLOY COMPOSITION ON DEEP ELECTRON TRAPS ON N-ALXGA1-XAS GROWN BY MBE [J].
YAMANAKA, K ;
NARITSUKA, S ;
MANNOH, M ;
YUASA, T ;
NOMURA, Y ;
MIHARA, M ;
ISHII, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :229-232
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