CHEMICAL BEAM EPITAXY OF INDIUM-PHOSPHIDE

被引：58

作者：

BENCHIMOL, JL

ALAOUI, F

GAO, Y

LEROUX, G

RAO, EVK

ALEXANDRE, F

机构：

[1] Centre National d'Etudes des Télécommunications, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90351-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Several aspects of the growth of InP by chemical beam epitaxy, using triethyl-indium and phosphine sources, have been investigated: growth rate, carbon incorporation, Si and Be doping, and substrate misorientation effects. High purity layers could be grown, with 77 K mobilities as high as 112,000 cm2/V·s. An electrical activity of only 25% was measured for Be in InP. A comparison of two substrate misorientations, off (001) towards (111)A or (111)B plane, shows that the latter misorientation resulted in poorer epilayer quality. © 1990.

引用

收藏

页码：135 / 142

页数：8

相关论文

共 18 条

[1]

ALAOUI F, UNPUB

[2] GROWTH OF HIGH-QUALITY INDIUM-PHOSPHIDE FROM METALORGANIC SOURCES BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

DAVEY, ST ;

TUPPEN, CG ;

WAKEFIELD, B ;

DAVIES, GJ .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :816-818

[3] GROWTH PARAMETER DEPENDENCE OF BACKGROUND DOPING LEVEL IN GAAS, IN0.53GA0.47AS AND ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

BENCHIMOL, JL ;

ALEXANDRE, F ;

GAO, Y ;

ALAOUI, F .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :150-153

[4] SURFACE CHEMICAL-KINETICS DURING THE GROWTH OF GAAS BY CHEMICAL BEAM EPITAXY [J].

CHIU, TH ;

CUNNINGHAM, JE ;

ROBERTSON, A .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :136-139

[5] CARBON-REDUCTION IN GAAS FILMS GROWN BY LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY [J].

IGA, R ;

SUGIURA, H ;

YAMADA, T ;

WADA, K .

APPLIED PHYSICS LETTERS, 1989, 55 (05) :451-453

[6] SN DOPING FOR INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TETRAETHYLTIN [J].

KAWAGUCHI, Y ;

NAKASHIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :181-184

[7]

KAWAGUCHI Y, 1986, I PHYS C SER, V79, P79

[8]

KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619

[9] ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAWAMURA, Y ;

ASAHI, H ;

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :841-846

[10] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KOBAYASHI, N ;

BENCHIMOL, JL ;

ALEXANDRE, F ;

GAO, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1907-1909