DEFECTS IN ULTRAFAST QUENCHED ALUMINUM-DOPED SILICON

被引：11
作者：
CHANTRE, A
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期
关键词：
D O I：
10.1063/1.95651
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：263 / 265
页数：3
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共 19 条
[1]   INFLUENCE OF SCAN SPEED ON DEEP LEVEL DEFECTS IN CW LASER ANNEALED SILICON [J].
CHANTRE, A ;
KECHOUANE, M ;
AUVERT, G ;
BOIS, D .
APPLIED PHYSICS LETTERS, 1983, 43 (01) :98-100
[2]   VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON [J].
CHANTRE, A ;
KECHOUANE, M ;
BOIS, D .
PHYSICA B & C, 1983, 116 (1-3) :547-552
[3]   DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID-PHASE REGIME [J].
CHANTRE, A .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :269-280
[4]  
CHANTRE A, UNPUB
[5]  
CHANTRE A, 1983, DEFECTS SEMICONDUCTO, V2, P547
[6]   QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118
[7]  
GOSELE U, 1983, DEFECTS SEMICONDUCTO, V2, P45
[8]   THE PROPERTIES OF IRON IN SILICON [J].
GRAFF, K ;
PIEPER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :669-674
[9]  
Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221
[10]   OXYGEN-RELATED DONOR STATES IN SILICON [J].
KIMERLING, LC ;
BENTON, JL .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412
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