NOVEL PRECURSORS FOR THE GROWTH OF III-V SEMICONDUCTORS BY MOVPE

被引：21

作者：

BRADLEY, DC

FAKTOR, MM

SCOTT, M

WHITE, EAD

机构：

[1] PLESSEY RES LTD,ALLEN CLARK RES CTR,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2BP,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90230-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：101 / 106

页数：6

共 12 条

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GARRETT, I ;

LYONS, MH .

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[5]

FAKTOR MM, 1985, UNPUB

[6]

LONG JA, 1984, ELECTRONICS MATERIAL

[7]

MINAGAWA S, 1984, 2ND INT C MET VAP PH

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[9] GROWTH OF GAXIN1-XAS AND GAXIN1-XASYP1-Y USING PREFORMED ADDUCTS [J].

MOSS, RH ;

SPURDENS, PC .

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[10]

MOSS RH, 1980, COMMUNICATION

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