IMAGE REVERSAL OF POSITIVE PHOTORESIST - CHARACTERIZATION AND MODELING

被引:14
作者
KLOSE, H
SIGUSH, R
ARDEN, W
机构
[1] SIEMENS AG, RES & DEV LABS, TECHNOL GRP, MUNICH, FED REP GER
[2] SIEMENS AG, CENT RES LABS, DEPT MICROELECTR, LITHOG GRP, MUNICH, FED REP GER
关键词
D O I
10.1109/T-ED.1985.22175
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1654 / 1661
页数:8
相关论文
共 9 条
[1]  
ARDEN W, 1983, SOLID STATE TECHNOL, V26, P143
[2]   MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS [J].
DILL, FH ;
NEUREUTHER, AR ;
TUTTLE, JA ;
WALKER, EJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :456-464
[3]  
Hamel C. J., 1982, IBM Technical Disclosure Bulletin, V24
[4]  
KLOSE H, 1982 P KOD MICR ENG, P11
[5]  
MCDONALD SA, 1982 P KOD MICR ENG, P114
[6]  
Moritz H., 1978, US Patent, Patent No. 4104070
[7]  
NEUGEBAUER W, 1960, Patent No. 844039
[8]   NEW DIMENSIONS IN OPTICAL LITHOGRAPHY [J].
OLDHAM, WG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2176-2176
[9]  
WIDMANN D, 1980, DEVICE IMPACT NEW MI