DOPING CONSIDERATIONS FOR HETEROJUNCTIONS

被引：104

作者：

STERN, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.94171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：974 / 976

页数：3

共 17 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) :3900-3907

[2]

Bastard G., UNPUB

[3] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J].

COLLINS, DM ;

MARS, DE ;

FISCHER, B ;

KOCOT, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :857-861

[4] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

DELAGEBEAUDEUF, D ;

LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[5] EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

MORKOC, H ;

HESS, K ;

CHO, AY ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5689-5690

[6] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].

FANG, FF ;

HOWARD, WE .

PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&

[7] 2D HOT-ELECTRON TRANSPORT IN A MODULATION-DOPED GAAS/ALGAAS INTERFACE [J].

INOUE, M ;

HIDA, H ;

INAYAMA, M ;

INUISHI, Y ;

NANBU, K ;

HIYAMIZU, S .

PHYSICA B & C, 1983, 117 (MAR) :720-722

[8] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J].

ISHIKAWA, T ;

SAITO, J ;

SASA, S ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L675-L676

[9] PERSISTENT PHOTO-CONDUCTANCE AND PHOTOQUENCHING OF SELECTIVELY DOPED AL0.3GA0.7AS GAAS HETEROJUNCTIONS [J].

NATHAN, MI ;

JACKSON, TN ;

KIRCHNER, PD ;

MENDEZ, EE ;

PETTIT, GD ;

WOODALL, JM .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (04) :719-725

[10] ELECTRON-TRANSPORT IN POLAR HETEROLAYERS [J].

PRICE, PJ .

SURFACE SCIENCE, 1982, 113 (1-3) :199-210

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