CHARGE EMISSION FROM INTERFACE STATES AT SILICON GRAIN-BOUNDARIES BY THERMAL EMISSION AND THERMIONIC-FIELD EMISSION .2. EXPERIMENT

被引：8
|
作者：
DEGROOT, AW [1 ]
CARD, HC [1 ]
机构：
[1] UNIV MANITOBA,DEPT ELECT ENGN,MAT & DEVICES RES LAB,WINNIPEG R3T 2N2,MANITOBA,CANADA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 10期
关键词：
D O I：
10.1109/T-ED.1984.21718
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1370 / 1376
页数：7
相关论文
共 50 条
  • [31] Thermal Field Emission from a Log-Normal Distribution: Impact on Space Charge and Emittance
    Jensen, Kevin L.
    Petillo, John J.
    Panagos, Dimitrios N.
    2013 26TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2013,
  • [32] THERMAL EMISSION FROM THE NARROW-GAP STATES IN TIO2
    SASANUMA, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (08) : 3122 - 3123
  • [33] An impact of thermal electron energy on the field-electron emission from nanosized silicon tips
    Djuzhev, N. A.
    Demin, G. D.
    Glagolev, P. Yu.
    Makhiboroda, M. A.
    Patyukov, N. N.
    2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2018,
  • [34] First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation
    Kageshima, Hiroyuki
    Akiyama, Toru
    Shiraishi, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (04)
  • [35] THE EMISSION OF THERMAL-RADIATION FROM HOT GLASS .2. EMISSIVITY OF GOBS
    HARRIS, CP
    ISARD, JO
    GLASS TECHNOLOGY, 1990, 31 (01): : 21 - 24
  • [36] Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers
    Grekhov, I. V.
    Rodin, P. B.
    TECHNICAL PHYSICS LETTERS, 2011, 37 (09) : 849 - 853
  • [37] Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers
    I. V. Grekhov
    P. B. Rodin
    Technical Physics Letters, 2011, 37 : 849 - 853
  • [38] EXPERIMENTAL EVIDENCE FOR EXISTENCE OF 2 DISTINCT FIELD EMISSION CHARACTERISTICS FROM SILICON EMITTERS
    PERRY, RL
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 128 - &
  • [39] CORRELATION OF OPTICAL AND THERMAL EMISSION FROM MOBILITY GAP STATES IN DOPED HYDROGENATED AMORPHOUS-SILICON
    GELATOS, AV
    COHEN, JD
    HARBISON, JP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 291 - 294
  • [40] Superior field emission and alternating current conduction mechanisms for grains and grain boundaries in an NiO-[CdO]2 nanocomposite
    Karmakar, S.
    Raviteja, B.
    Mistari, Chetan D.
    Parey, Vanshree
    Thapa, Ranjit
    More, M. A.
    Behera, D.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2020, 142
12345