CHARGE EMISSION FROM INTERFACE STATES AT SILICON GRAIN-BOUNDARIES BY THERMAL EMISSION AND THERMIONIC-FIELD EMISSION .2. EXPERIMENT

被引：8

作者：

DEGROOT, AW ^{[1
]}

CARD, HC ^{[1
]}

机构：

[1] UNIV MANITOBA,DEPT ELECT ENGN,MAT & DEVICES RES LAB,WINNIPEG R3T 2N2,MANITOBA,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 10期

关键词：

D O I：

10.1109/T-ED.1984.21718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1370 / 1376

页数：7

共 50 条

[1] CHARGE EMISSION FROM INTERFACE STATES AT SILICON GRAIN-BOUNDARIES BY THERMAL EMISSION AND THERMIONIC-FIELD EMISSION .1. THEORY
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[2] THERMIONIC-FIELD EMISSION FROM INTERFACE STATES AT GRAIN-BOUNDARIES IN SILICON
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