LASER VACUUM EPITAXY OF AIIIBV SEMICONDUCTORS ON SILICON

被引：0

作者：

BUDYANU, VA

CHECHUY, SN

DAMASKIN, IA

FEDOSEEV, SA

NASAKIN, AA

PYSHKIN, SL

VALKOVSKAYA, MI

ZENCHENKO, VP

机构：

来源：

REVUE ROUMAINE DE PHYSIQUE | 1987年 / 32卷 / 1-2期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：215 / &

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