INVESTIGATION OF TRANSIENT ELECTRONIC TRANSPORT IN GAAS FOLLOWING HIGH-ENERGY INJECTION

被引：47
作者：
TANG, JYF
HESS, K
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 12期
关键词：
D O I：
10.1109/T-ED.1982.21050
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1906 / 1911
页数：6
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