TRANSISTOR DESIGN FOR LOW DISTORTION AT HIGH-FREQUENCIES

被引：10

作者：

ABRAHAM, HE

MEYER, RG

机构：

[1] HEWLETT PACKARD CO, LOVELAND, CO 80537 USA

[2] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[3] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 12期

关键词：

D O I：

10.1109/T-ED.1976.18652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1290 / 1297

页数：8

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