TRANSISTOR DESIGN FOR LOW DISTORTION AT HIGH-FREQUENCIES

被引：10
|
作者：
ABRAHAM, HE
MEYER, RG
机构：
[1] HEWLETT PACKARD CO, LOVELAND, CO 80537 USA
[2] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
[3] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 12期
关键词：
D O I：
10.1109/T-ED.1976.18652
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1290 / 1297
页数：8
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