VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS

被引：34

作者：

BAILEY, RS

KAPOOR, VJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：484 / 487

页数：4

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