VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS

被引：34
作者：
BAILEY, RS
KAPOOR, VJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期
关键词：
D O I：
10.1116/1.571341
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：484 / 487
页数：4
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