ANOMALOUS DIELECTRIC BEHAVIOR IN NANOMETER-SIZED AMORPHOUS-SILICON NITRIDE

被引：10

作者：

WANG, T ^{[1
]}

ZHANG, L ^{[1
]}

MOU, JM ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,DEPT MAT SCI & ENGN,HEFEI 230026,PEOPLES R CHINA

来源：

CHINESE PHYSICS LETTERS | 1993年 / 10卷 / 11期

关键词：

D O I：

10.1088/0256-307X/10/11/011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An anamalous dielectric behavior in nanometer-sized amorphous silicon nitride is reported. The dielectric constant of nanometer-sized amorphous silicon nitride has strong dependence on frequency at room temperature (RT), which is completely different from the conventional coarse-grain silicon nitride. The maximum of the dielectric constant of nanometer-sized amorphous silicon nitride at RT is about 40 times larger than that of the conventional silicon nitride. The anomalous dielectric behavior is explained by a kind of mechanism of polarization, that is, interfacial polarization.

引用

页码：676 / 679

页数：4