EXTRINSIC TRISTABILITY AS THE CAUSE OF BISTABILITY IN RESONANT-TUNNELING DIODES

被引：2
作者：
JOGAI, B
机构：
[1] Universal Energy Systems, Inc., Dayton, OH 45432
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 11卷 / 04期
关键词：
D O I：
10.1016/0749-6036(92)90193-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The problem of extrinsic bistability in the current-voltage (I-V) curves of resonant-tunneling diodes (RTDs) is examined with the aid of a simple lumped-circuit model. It is shown that the presence of series resistance causes the I-V curve to fold over in the region that would normally exhibit negative differential resistance (NDR). Thus for each value of bias voltage, there are three possible values of current. This phenomenon is labelled extrinsic tristability and shown to be the underlying cause of extrinsic bistability in RTDs. © 1992.
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页码：383 / 385
页数：3
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