EXTRINSIC TRISTABILITY AS THE CAUSE OF BISTABILITY IN RESONANT-TUNNELING DIODES

被引：2

作者：

JOGAI, B

机构：

[1] Universal Energy Systems, Inc., Dayton, OH 45432

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 11卷 / 04期

关键词：

D O I：

10.1016/0749-6036(92)90193-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The problem of extrinsic bistability in the current-voltage (I-V) curves of resonant-tunneling diodes (RTDs) is examined with the aid of a simple lumped-circuit model. It is shown that the presence of series resistance causes the I-V curve to fold over in the region that would normally exhibit negative differential resistance (NDR). Thus for each value of bias voltage, there are three possible values of current. This phenomenon is labelled extrinsic tristability and shown to be the underlying cause of extrinsic bistability in RTDs. © 1992.

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页码：383 / 385

页数：3

相关论文

共 12 条

[1] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].

BROWN, ER ;

SOLLNER, TCLG ;

PARKER, CD ;

GOODHUE, WD ;

CHEN, CL .

APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779

[2] ON THE INTRINSIC BISTABILITY IN RESONANT TUNNELING STRUCTURES - OBSERVATION OF AREA AND TEMPERATURE-DEPENDENCE OF HYSTERESIS [J].

CHEN, JG ;

CHEN, J ;

WILSON, RA ;

JOHNSON, W ;

YANG, CH .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) :2473-2475

[3] IS INTRINSIC BISTABILITY REALLY INTRINSIC TRISTABILITY [J].

COON, DD ;

BANDARA, KMSV ;

ZHAO, H .

APPLIED PHYSICS LETTERS, 1989, 54 (21) :2115-2117

[4] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[5] A PARAMETRIC STUDY OF EXTRINSIC BISTABILITY IN THE CURRENT-VOLTAGE CURVES OF RESONANT-TUNNELING DIODES [J].

JOGAI, B ;

KOENIG, ET .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3381-3383

[6] TUNNELING BETWEEN LOCALIZED STATES IN GAAS/ALGAAS RESONANT TUNNELING DIODES WITH SPACER LAYERS [J].

JOGAI, B ;

HUANG, CI ;

KOENIG, ET ;

BOZADA, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (01) :143-148

[7] GAAS/ALAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE ON SI WITH LARGE PEAK TO VALLEY RATIO AT ROOM-TEMPERATURE [J].

KAN, SC ;

MORKOC, H ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2250-2251

[8]

KOENIG ET, UNPUB

[9] SIMULATION OF EXTRINSIC BISTABILITY OF RESONANT TUNNELING STRUCTURES [J].

LIU, HC .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :485-486

[10]

REED MA, 1987, SPIE QUANTUM WELL SU, V792, P18