CHANNELING OF IONS NEAR THE SILICON (001) AXIS

被引：36

作者：

ZIEGLER, JF ^{[1
]}

LEVER, RF ^{[1
]}

机构：

[1] IBM CORP,GPD DIV,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.95630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

页码：358 / 360

页数：3

共 42 条

[1]

Armstrong A., 1983, Ion Implantation: Equipment and Techniques. Proceedings of the Fourth International Conference, P155

[2]

Blunt R. T., 1983, Ion Implantation: Equipment and Techniques. Proceedings of the Fourth International Conference, P443

[3]

BREDOV MM, 1957, DOKL AKAD NAUK SSSR+, V113, P795

[4] IMPACT-PARAMETER DEPENDENCE OF INELASTIC ENERGY-LOSSES FOR HE AND N-IONS CHANNELED IN SI [J].

BULGAKOV, YV ;

NIKOLAEV, VS ;

SHULGA, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01) :341-&

[5] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].

CARTER, C ;

MASZARA, W ;

SADANA, DK ;

ROZGONYI, GA ;

LIU, J ;

WORTMAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :459-461

[6]

CHO K, UNPUB NUCL INSTRUM M

[7] CHANNELING AND RANDOM EQUIVALENT DEPTH DISTRIBUTIONS OF 150 KEV LI, BE, AND B IMPLANTED IN SI [J].

COMAS, J ;

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3697-3701

[8]

CURRENT MI, 1985, NUCL INSTRUM MET JAN

[9] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J].

DAVIES, JA ;

BROWN, F ;

BALL, GC ;

DOMEIJ, B .

CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) :1070-&

[10] A RADIOCHEMICAL TECHNIQUE FOR STUDYING RANGE-ENERGY RELATIONSHIPS FOR HEAVY IONS OF KEV ENERGIES IN ALUMINUM [J].

DAVIES, JA ;

FRIESEN, J ;

MCINTYRE, JD .

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09) :1526-1534

← 1 2 3 4 5 →