CORRELATION BETWEEN MOST 1/F NOISE AND CCD TRANSFER INEFFICIENCY

[1] AMBROZY A, 1982, ELECTRONIC NOISE, P108

[2] EXPERIMENTAL RESULTS ON FAST SURFACE STATES AND 1-F NOISE IN MOS-TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 97 - 98

[3] SMALL-SIGNAL CHARGE-TRANSFER INEFFICIENCY EXPERIMENTS EXPLAINED BY THE MCWHORTER INTERFACE STATE MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1454 - 1462

[4] ON EXPRESSIONS FOR 1/F NOISE IN MOBILITY [J]. PHYSICA B & C, 1982, 114 (03): : 391 - 392

[5] DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J]. PHYSICA, 1972, 60 (01): : 130 - +

[6] EXPERIMENTAL STUDIES ON 1-F NOISE [J]. REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) : 479 - 532

[7] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[8] Katto H, 1975, J JPN SOC APPL PHY S, V44, P243

[9] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 887 - +

[10] MODEL FOR 1-F NOISE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1594 - 1596

[1] AMBROZY A, 1982, ELECTRONIC NOISE, P108

[2] EXPERIMENTAL RESULTS ON FAST SURFACE STATES AND 1-F NOISE IN MOS-TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 97 - 98

[3] SMALL-SIGNAL CHARGE-TRANSFER INEFFICIENCY EXPERIMENTS EXPLAINED BY THE MCWHORTER INTERFACE STATE MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1454 - 1462

[4] ON EXPRESSIONS FOR 1/F NOISE IN MOBILITY [J]. PHYSICA B & C, 1982, 114 (03): : 391 - 392

[5] DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J]. PHYSICA, 1972, 60 (01): : 130 - +

[6] EXPERIMENTAL STUDIES ON 1-F NOISE [J]. REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) : 479 - 532

[7] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[8] Katto H, 1975, J JPN SOC APPL PHY S, V44, P243

[9] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 887 - +

[10] MODEL FOR 1-F NOISE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1594 - 1596