PICOSECOND ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON

被引：1

作者：

TAUC, J

DEVLEN, RI

SCHIFF, EA

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244

来源：

SOLAR CELLS | 1989年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0379-6787(89)90026-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：169 / 175

页数：7

共 50 条

[1] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
SHIRAFUJI, J
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JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 473 - 476
[2] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON QUANTUM-WELLS
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[3] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON PREPARED BY RF SPUTTERING
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[4] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON - DRIFT MOBILITY AND JUNCTION CAPACITANCE
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[5] LONGITUDINAL ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE MULTILAYER STRUCTURES
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[6] NEW TYPE OF ELECTRON-TRANSPORT IN AMORPHOUS-SILICON
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[7] ELECTRON-TRANSPORT MECHANISMS IN METAL SCHOTTKY-BARRIER CONTACTS TO HYDROGENATED AMORPHOUS-SILICON
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[8] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS
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[9] TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
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[10] HIGH-FIELD ELECTRON-TRANSPORT AND HOT-ELECTRON PHENOMENA IN HYDROGENATED AMORPHOUS-SILICON FILMS
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