FILM THICKNESS DEPENDENCE OF SILICON REDUCED LPCVD TUNGSTEN ON NATIVE OXIDE THICKNESS

被引：59

作者：

BUSTA, HH

TANG, CH

机构：

[1] Gould Research Cent, Rolling, Meadows, IL, USA, Gould Research Cent, Rolling Meadows, IL, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 06期

关键词：

All Open Access; Bronze;

D O I：

10.1149/1.2108818

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

TUNGSTEN AND ALLOYS

引用

页码：1195 / 1200

页数：6

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[10] MICROSTRUCTURE, GROWTH, RESISTIVITY, AND STRESSES IN THIN TUNGSTEN FILMS DEPOSITED BY RF SPUTTERING [J].

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