ACHIEVEMENT OF WELL CONDUCTING WIDE-BAND-GAP SEMICONDUCTORS - ROLE OF SOLUBILITY AND NONEQUILIBRIUM IMPURITY INCORPORATION

被引：54
作者：
NEUMARK, GF
机构：
来源：
PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 15期
关键词：
D O I：
10.1103/PhysRevLett.62.1800
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1800 / 1803
页数：4
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