LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF SI1-XGEX LAYERS ON SI SUBSTRATES

被引：37

作者：

HANSSON, PO ^{[1
]}

WERNER, JH ^{[1
]}

TAPFER, L ^{[1
]}

TILLY, LP ^{[1
]}

BAUSER, E ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Liquid-phase epitaxy allows SiGe alloys of good quality to be grown on Si substrates. We deposit single crystalline, n-type Si1-xGex films with 0.7<x<1 from Bi solutions on (111)-oriented Si. The films are up to several μm thick and are uniform in thickness and in composition. The analysis by x-ray diffraction indicates good crystallinity and a dislocation density below 5×107 cm-2. Photoluminescence measurements show well-resolved peaks with the smallest linewidths reported so far for epitaxial SiGe. Hall-effect measurements yield electron concentrations around 1×1016 cm-3 and room-temperature electron mobilities of up to 340 cm2/V s.

引用

页码：2158 / 2163

页数：6

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