HIGH-QUALITY IN0.53GA0.47AS SCHOTTKY DIODE FORMED BY GRADED SUPERLATTICE OF IN0.53GA0.47AS/IN0.52AL0.48AS

被引：18
作者：
LEE, DH [1 ]
LI, SS [1 ]
SAUER, NJ [1 ]
CHANG, TY [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期
关键词：
D O I：
10.1063/1.101261
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1863 / 1865
页数：3
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