DETERMINATION OF THE CRITICAL CURRENT-DENSITY IN HTSC THIN-FILM MULTILAYERS

被引：5

作者：

BEHNER, H

RAUCH, W

GORNIK, E

机构：

[1] SIEMENS AG,CORP RES & DEV,W-8000 MUNICH 83,GERMANY

[2] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1992年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.1143737

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper the limitations and perspectives of a simple remanent field technique for the determination of the critical current density (j(c)) in high-temperature superconductor (HTSC) thin films and in HTSC thin-film multilayers at 77 K were examined. As the comparison with resistive j(c) measurements on microbridges shows, j(c) values down to 10(4) A/cm2 can easily be measured with high accuracy. The method is nondestructive, fast, and inexpensive. It is especially suitable for j(c) measurements of double-sided coated substrates, where the determination of the individual j(c) values of both thin-film layers is possible.

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收藏

页码：4373 / 4376

页数：4

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