REDISTRIBUTION OF FE IN THERMALLY ANNEALED SEMI-INSULATING INP(FE) - DETERMINATION OF FE DIFFUSION-COEFFICIENT IN INP

被引:44
作者
KAMADA, H
SHINOYAMA, S
KATSUI, A
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D O I
10.1063/1.333327
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O59 [应用物理学];
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页码:2881 / 2884
页数:4
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共 16 条
[1]   PHASE-EQUILIBRIA AND VAPOR-PRESSURES OF PURE PHOSPHORUS AND OF INDIUM-PHOSPHORUS SYSTEM AND THEIR IMPLICATIONS REGARDING CRYSTAL-GROWTH OF INP [J].
BACHMANN, KJ ;
BUEHLER, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :835-846
[2]   LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES [J].
DONNELLY, JP ;
BOZLER, CO ;
LINDLEY, WT .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :273-276
[3]   REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].
EVANS, CA ;
DELINE, VR ;
SIGMON, TW ;
LIDOW, A .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293
[4]   REDISTRIBUTION OF FE IN INP DURING LIQUID-PHASE EPITAXY [J].
HOLMES, DE ;
WILSON, RG ;
YU, PW .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3396-3399
[5]  
HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[6]  
KOBAYASHI K, COMMUNICATION
[7]  
LINH NT, 1981, SEMIINSULATING 3 5 M, P211
[8]   STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING [J].
MAGEE, TJ ;
KAWAYOSHI, H ;
ORMOND, RD ;
CHRISTEL, LA ;
GIBBONS, JF ;
HOPKINS, CG ;
EVANS, CA ;
DAY, DS .
APPLIED PHYSICS LETTERS, 1981, 39 (11) :906-908
[9]   ANNEALING OF DAMAGE AND REDISTRIBUTION OF CR IN BORON-IMPLANTED SI3N4-CAPPED GAAS [J].
MAGEE, TJ ;
LEE, KS ;
ORMOND, R ;
BLATTNER, RJ ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :447-449
[10]   IRON AND CHROMIUM REDISTRIBUTION IN SEMI-INSULATING INP [J].
OBERSTAR, JD ;
STREETMAN, BG ;
BAKER, JE ;
WILLIAMS, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) :1814-1817