MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS

被引：61

作者：

HORIKOSHI, Y

机构：

[1] NTT Basic Res. Labs., Tokyo

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 06期

关键词：

D O I：

10.1088/0268-1242/8/6/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The principle and characteristics of migration-enhanced epitaxy are reviewed. Migration of surface adatoms along the surface is very important for growing high quality layers and atomically flat heterojunctions. In the migration-enhanced epitaxy of GaAs and AlGaAs, migration of surface Ga and Al atoms is enhanced even at low substrate temperatures by evaporating them onto a clean GaAs surface under an As-free or low As pressure atmosphere. Thus, high quality GaAs and AlGaAs layers and flat heterojunctions have been grown by this method. Migration-enhanced epitaxy has also proved useful in investigating atomic processes during epitaxial growth.

引用

页码：1032 / 1051

页数：20

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