STUDY OF THE CUINSE2/MO THIN-FILM CONTACT STABILITY

被引：25
作者：
RAUD, S
NICOLET, MA
机构：
[1] California Institute of Technology, Pasadena
来源：
THIN SOLID FILMS | 1991年 / 201卷 / 02期
关键词：
D O I：
10.1016/0040-6090(91)90124-G
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The microstructure, the composition and the homogeneity of CuInSe2 thin films deposited on molybdenum-coated glass substrates are characterized before and after annealing using X-ray diffraction, Rutherford backscattering (RBS), cross-sectional transmission electron microscopy and scanning electron microscopy. An instability of the CuInSe2-metal contact after annealing at 600-degrees-C is detected by RBS. To clarify the nature of this interreaction, we have studied the Mo/Cu, Mo/In and Se/Mo couples as a function of annealing. No interaction is detected by RBS for the Mo/Cu and Mo/In bilayers but selenium does interreact with molybdenum. The formation of the MoSe2 is investigated using X-ray diffraction.
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收藏
页码：361 / 371
页数：11
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