SMALL-SIGNAL MOSFET ONE-DIMENSIONAL ADMITTANCE MODEL

被引：0

作者：

ZHANG, YM ^{[1
]}

DEMASSA, TA ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,TEMPE,AZ 85281

来源：

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, MOSFET

引用

页码：721 / 731

页数：11

共 8 条

[1] EQUIVALENT CIRCUIT AND GAIN OF MOS FIELD EFFECT TRANSISTORS
FISCHER, W
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 71 - +
[2] SMALL-SIGNAL MOSFET MODELS FOR ANALOG CIRCUIT-DESIGN
LIU, S
NAGEL, LW
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (06) : 983 - 998
[3] MEYER JE, 1971, RCA REV, V32, P42
[4] PAO HC, 1966, IEEE T ELECTRON DEV, V12, P139
[5] PIERRET RF, 1983, MODULAR SERIES SOLID, V4
[6] SZE SM, 1981, PHYSICS SEMICONDUCTO, P480
[7] AC MODEL FOR MOS-TRANSISTORS FROM TRANSIENT-CURRENT COMPUTATIONS
TONG, KY
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01): : 33 - 36
[8] CHARGE-ORIENTED MODEL FOR MOS-TRANSISTOR CAPACITANCES
WARD, DE
DUTTON, RW
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 703 - 708