VALENCE-BAND AND CONDUCTION-BAND DENSITIES OF STATES FOR TETRAHEDRAL SEMICONDUCTORS - THEORY AND EXPERIMENT

被引：113

作者：

CHELIKOWSKY, JR

WAGENER, TJ

WEAVER, JH

JIN, A

机构：

[1] UNIV MINNESOTA,MINNESOTA SUPERCOMP INST,MINNEAPOLIS,MN 55455

[2] UNIV MINNESOTA,DEPT PHYS,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.40.9644

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9644 / 9651

页数：8

共 24 条

[1] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW LETTERS, 1976, 37 (12) :766-769

[2] ATOMIC PSEUDOPOTENTIALS AND IONICITY PARAMETER OF PHILLIPS AND VANVECHTEN [J].

CHADI, DJ ;

COHEN, ML ;

GROBMAN, WD .

PHYSICAL REVIEW B, 1973, 8 (12) :5587-5591

[3] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES [J].

CHAMBERS, SA ;

HILL, DM ;

XU, F ;

WEAVER, JH .

PHYSICAL REVIEW B, 1987, 35 (02) :634-640

[4] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, J ;

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794

[5] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[6] HIGH-PRESSURE PHASE-TRANSITIONS IN DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR .

PHYSICAL REVIEW B, 1987, 35 (03) :1174-1180

[7]

CHELIKOWSKY JR, 1971, SOLID STATE COMMUN, V22, P351

[8] BREMSSTRAHLUNG ISOCHROMAT FROM NICKEL - EFFECTS OF INCIDENT-ELECTRON ENERGY AND FINAL-STATE SYMMETRY [J].

CHU, CC ;

BEST, PE .

PHYSICAL REVIEW B, 1979, 19 (07) :3414-3419

[9] DENSITY OF STATES ABOVE FERMI LEVEL IN COPPER [J].

CHU, CC ;

BEST, PE .

PHYSICAL REVIEW B, 1975, 12 (10) :4575-4576

[10]

COHEN ML, 1988, ELECTRONIC STRUCTURE

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