Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

被引：13

作者：

Esqueda, Ivan S. ^{[1
]}

Cress, Cory D. ^{[2
]}

Anderson, Travis J. ^{[2
]}

Ahlbin, Jonathan R. ^{[1
]}

Bajura, Michael ^{[1
]}

Fritze, Michael ^{[1
]}

Moon, Jeong-S. ^{[3
]}

机构：

[1] Univ Southern Calif, Inst Informat Sci, Arlington, VA 22203 USA

[2] Elect Sci & Technol Div, US Naval Res Lab, Washington, DC 20375 USA

[3] HRL Labs LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS | 2013年 / 2卷 / 03期

关键词：

graphene; field-effect-transistors (FETs); total ionizing dose (TID); radiation; conductivity; mobility;

D O I：

10.3390/electronics2030234

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper investigates total ionizing dose (TID) effects in top-gated epitaxial graphene field-effect-transistors (GFETs). Measurements reveal voltage shifts in the current-voltage (I-V) characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.

引用

页码：234 / 245

页数：12

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