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HIGH-VOLTAGE SIMULTANEOUS DIFFUSION SILICON-GATE CMOS
被引:4
作者
:
BLANCHARD, RA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
BLANCHARD, RA
[
1
]
GARGINI, PA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
GARGINI, PA
[
1
]
MAY, GA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
MAY, GA
[
1
]
MELEN, RD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
MELEN, RD
[
1
]
机构
:
[1]
STANFORD INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA
来源
:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
|
1974年
/ SC 9卷
/ 03期
关键词
:
D O I
:
10.1109/JSSC.1974.1050476
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:103 / 110
页数:8
相关论文
共 13 条
[1]
CRAWFORD RH, 1968, MOSFET CIRCUIT DESIG
[2]
BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(11-1)
: 1873
-
&
[3]
GENTRY FE, 1974, SEMICONDUCTOR CONTRO
[4]
GHANDHI SK, 1968, THEORY PRACTICE MICR
[5]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]
EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
HOOPER, WW
论文数:
0
引用数:
0
h-index:
0
HOOPER, WW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(03)
: 157
-
+
[7]
MELEN RD, 1973, 1973 W EL SHOW CONV
[8]
SOME RELIABILITY CONSIDERATIONS PERTAINING TO LSI TECHNOLOGY
SCHLACTER, MM
论文数:
0
引用数:
0
h-index:
0
SCHLACTER, MM
KEEN, RS
论文数:
0
引用数:
0
h-index:
0
KEEN, RS
SCHNABLE, GL
论文数:
0
引用数:
0
h-index:
0
SCHNABLE, GL
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1971,
SC 6
(05)
: 327
-
+
[9]
ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
MEINDL, JD
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(02)
: 146
-
+
[10]
EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(09)
: 831
-
&
←
1
2
→
共 13 条
[1]
CRAWFORD RH, 1968, MOSFET CIRCUIT DESIG
[2]
BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(11-1)
: 1873
-
&
[3]
GENTRY FE, 1974, SEMICONDUCTOR CONTRO
[4]
GHANDHI SK, 1968, THEORY PRACTICE MICR
[5]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]
EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
HOOPER, WW
论文数:
0
引用数:
0
h-index:
0
HOOPER, WW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(03)
: 157
-
+
[7]
MELEN RD, 1973, 1973 W EL SHOW CONV
[8]
SOME RELIABILITY CONSIDERATIONS PERTAINING TO LSI TECHNOLOGY
SCHLACTER, MM
论文数:
0
引用数:
0
h-index:
0
SCHLACTER, MM
KEEN, RS
论文数:
0
引用数:
0
h-index:
0
KEEN, RS
SCHNABLE, GL
论文数:
0
引用数:
0
h-index:
0
SCHNABLE, GL
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1971,
SC 6
(05)
: 327
-
+
[9]
ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
MEINDL, JD
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(02)
: 146
-
+
[10]
EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(09)
: 831
-
&
←
1
2
→