ARSENIC IMPLANTATION IN CVD TUNGSTEN SILICIDE

[1] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2] PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 952 - 956

[3] CHOW TP, 1982, J ELECTROCHEM SOC, V130, P933

[4] ENOMOTO S, 1983, 2ND P S ION BEAM TEC, P25

[5] HARA T, 1984, MAY EL SOC CINC M

[6] HARA T, UNPUB JAPAN J APPL P

[7] HARA T, 1984, JAPAN J APPL PHYS, V23, P479

[8] PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2402 - 2410

[9] HEXAGONAL WSI2 IN CO-SPUTTERED (TUNGSTEN AND SILICON) MIXTURE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7450 - 7452

[10] DOPANT DIFFUSION IN TUNGSTEN SILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3059 - 3062

[1] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2] PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 952 - 956

[3] CHOW TP, 1982, J ELECTROCHEM SOC, V130, P933

[4] ENOMOTO S, 1983, 2ND P S ION BEAM TEC, P25

[5] HARA T, 1984, MAY EL SOC CINC M

[6] HARA T, UNPUB JAPAN J APPL P

[7] HARA T, 1984, JAPAN J APPL PHYS, V23, P479

[8] PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2402 - 2410

[9] HEXAGONAL WSI2 IN CO-SPUTTERED (TUNGSTEN AND SILICON) MIXTURE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7450 - 7452

[10] DOPANT DIFFUSION IN TUNGSTEN SILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3059 - 3062