Research on VOx uncooled infrared bolometer based on porous silicon

被引：0

作者：

Wang, Bin ^{[1
,2
]}

Lai, Jianjun ^{[1
,2
]}

Zhao, Erjing ^{[1
]}

Hu, Haoming ^{[1
]}

Chen, Sihai ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Optoelect Sci & Engn, Wuhan 430074, Hubei, Peoples R China

[2] Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China

来源：

FRONTIERS OF OPTOELECTRONICS | 2012年 / 5卷 / 03期

基金：

中国国家自然科学基金;

关键词：

infrared (IR); porous silicon; microbolometer; micromachining;

D O I：

10.1007/s12200-012-0224-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, vanadium oxide thin film of TCR of -3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VOx has been investigated by X-ray diffractometer (XRD) and atomic force microscopy (AFM) in detail. XRD test indicates that this film is composed of V2O3, V3O5 and VO2. VOx microbolometer with infrared (IR) absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8-14 ae m, has maximum detectivity of 1.09 x 109 cm$ Hz(1/2)/W at 24 Hz frequency and 9.8 mu A bias current.

引用

页码：292 / 297

页数：6

共 50 条

[21] Mid-Infrared Silicon Waveguide-Based Bolometer
Wu, Yangbo
Qu, Zhibo
Osman, Ahmed M.
Cao, Wei
Khokhar, Ali Z.
Penades, Jordi Soler
Mashanovich, Goran Z.
Nedeljkovic, Milos
Muskens, Otto L.
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019), 2019,
[22] Performance of 320 × 240 bolometer-type uncooled infrared detector
Oda, Naoki
Tanaka, Yutaka
Sasaki, Tokuhito
Ajisawa, Akira
Kawahara, Akihiro
Kurashina, Seiji
NEC Research and Development, 2003, 44 (SPEC.): : 170 - 174
[23] Uncooled infrared detector based on silicon diode Wheatstone bridge
Fei Feng
Huihui Zhu
Min Liu
Xudong Wei
Xiaohong Ge
Yuelin Wang
Xinxin Li
Microsystem Technologies, 2017, 23 : 669 - 676
[24] Performance of 320 × 240 bolometer-type uncooled infrared detector
Oda, Naoki
Tanaka, Yutaka
Sasaki, Tokuhito
Ajisawa, Akira
Kawahara, Akihiro
Kurashina, Seiji
NEC Research and Development, 2003, 44 (02): : 170 - 174
[25] A compact lightweight earth horizon sensor using an uncooled infrared bolometer
Marchese, Linda E.
Thomas, Paul
Pope, Timothy D.
Asselin, Daniel
Jerominek, Hubert
PHOTONICS NORTH 2007, PTS 1 AND 2, 2007, 6796
[26] Far infrared low-cost uncooled bolometer for automotive use
Kvisteroy, T.
Jakobsen, H.
Vieider, C.
Wissmar, St.
Ericsson, R.
Halldin, U.
Niklaus, F.
Forsberg, Fr.
Stemme, G.
Kallhammer, J. E.
Pettersson, H.
Eriksson, D.
Franks, J.
VanNylen, J.
Vercammen, H.
VanHulsel, A.
ADVANCED MICROSYSTEMS FOR AUTOMOTIVE APPLICATIONS 2007, 2007, : 265 - +
[27] Uncooled infrared detector based on silicon diode Wheatstone bridge
Feng, Fei
Zhu, Huihui
Liu, Min
Wei, Xudong
Ge, Xiaohong
Wang, Yuelin
Li, Xinxin
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2017, 23 (03): : 669 - 676
[28] Effective uncooled infrared bolometer based on SOI gate all around electrostatically formed nanowire transistors
Shimanovich, Klimentiy
Mutsafi, Zoe
Rosenwaks, Yossi
ENGINEERING RESEARCH EXPRESS, 2020, 2 (03):
[29] Bias offset correction technique for uncooled infrared bolometer sensor readout IC
Park, Sang Won
Hwang, Sang Joon
Ryu, Jang Woo
Hong, Seung Woo
Sung, Man Young
2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 2005, : 725 - 728
[30] Characterization of uncooled bolometer with vanadium tungsten oxide infrared-active layer
Anh, NC
Shin, HJ
Kim, KT
Han, YH
Moon, S
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S921 - S923

← 1 2 3 4 5 →