OPTICAL-PROPERTIES OF EXTREMELY HEAVILY DOPED SI OBTAINED BY ION-IMPLANTATION AND LASER ANNEALING

被引:0
作者
MOTOOKA, T [1 ]
MIYAO, M [1 ]
TOKUYAMA, T [1 ]
机构
[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C103 / C103
页数:1
相关论文
共 50 条
  • [41] ELECTRICAL AND STRUCTURAL-PROPERTIES OF SILICON LAYERS HEAVILY DAMAGED BY ION-IMPLANTATION
    BOUSSEYSAID, J
    GHIBAUDO, G
    STOEMENOS, I
    ZAUMSEIL, P
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 61 - 68
  • [42] LASER ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS WITH KRF EXCIMER LASER-RADIATION
    HESS, LD
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (09) : D45 - D45
  • [43] Optical properties of metal nanoparticles formed by ion implantation and modified by laser annealing
    Stepanov, Andrey L.
    FUNCTIONAL PROPERTIES OF NANOSTRUCTURED MATERIALS, 2006, 223 : 139 - 160
  • [44] STRUCTURAL CHARACTERIZATION OF DAMAGE IN SI(100) PRODUCED BY MEV SI+ ION-IMPLANTATION AND ANNEALING
    ELGHOR, MK
    HOLLAND, OW
    WHITE, CW
    PENNYCOOK, SJ
    JOURNAL OF MATERIALS RESEARCH, 1990, 5 (02) : 352 - 359
  • [45] ANNEALING AND ION-IMPLANTATION EFFECTS ON SEMIINSULATING GAAS OBTAINED FROM PHOTOINDUCED MICROWAVE REFLECTION
    GUTMANN, RJ
    CAMPBELL, C
    BORREGO, JM
    BLISS, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) : C452 - C452
  • [46] PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION - THERMAL ANNEALING
    SPITZER, WG
    HUBLER, GK
    KENNEDY, TA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 309 - 312
  • [47] Electrical properties of heavily Si-doped GaAsN after annealing
    Tsukasaki, Takashi
    Mochida, Naoki
    Fujita, Miki
    Makimoto, Toshiki
    PHYSICA B-CONDENSED MATTER, 2022, 625
  • [48] OPTICAL-PROPERTIES OF HEAVILY DOPED SILICON BETWEEN 1.5 AND 4.1 EV
    JELLISON, GE
    MODINE, FA
    WHITE, CW
    WOOD, RF
    YOUNG, RT
    PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1414 - 1417
  • [49] OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTATION DAMAGE IN SI ON SAPPHIRE
    ZAMMIT, U
    MADHUSOODANAN, KN
    MARINELLI, M
    SCUDIERI, F
    PIZZOFERRATO, R
    MERCURI, F
    WENDLER, E
    WESCH, W
    PHYSICAL REVIEW B, 1994, 49 (20): : 14322 - 14330
  • [50] OPTICAL-PROPERTIES OF AMORPHOUS SI PARTIALLY CRYSTALLIZED BY THERMAL ANNEALING
    SUZUKI, T
    ADACHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A): : 4900 - 4906