OPTICAL-PROPERTIES OF EXTREMELY HEAVILY DOPED SI OBTAINED BY ION-IMPLANTATION AND LASER ANNEALING

被引:0
作者
MOTOOKA, T [1 ]
MIYAO, M [1 ]
TOKUYAMA, T [1 ]
机构
[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C103 / C103
页数:1
相关论文
共 50 条
  • [31] OPTICAL-PROPERTIES OF GAAS PARTIALLY AMORPHIZED BY ION-IMPLANTATION - EFFECTIVE-MEDIUM-APPROXIMATION ANALYSIS
    ADACHI, S
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7768 - 7773
  • [32] ELECTRICAL PROPERTIES OF PHOSPHORUS DOPED SILICON LAYERS OBTAINED BY ION-IMPLANTATION THROUGH A PASSIVATING OXIDE
    VERJANS, J
    VANOVERS.R
    PATTYN, H
    DEKEERSM.R
    SOLID-STATE ELECTRONICS, 1973, 16 (07) : 779 - 785
  • [33] MG+ ION-IMPLANTATION INTO GAAS - ANNEALING AND PHOTOLUMINESCENCE PROPERTIES
    TAKEUCHI, Y
    MAKITA, Y
    MORI, M
    OHNISHI, N
    SHIBATA, H
    MATSUMORI, T
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 483 - 487
  • [34] FUNDAMENTAL OPTICAL-PROPERTIES OF HEAVILY-BORON-DOPED SILICON
    BORGHESI, A
    BOTTAZZI, P
    GUIZZETTI, G
    NOSENZO, L
    STELLA, A
    CAMPISANO, SU
    RIMINI, E
    CEMBALI, F
    SERVIDORI, M
    PHYSICAL REVIEW B, 1987, 36 (18): : 9563 - 9568
  • [35] SILICON SOLAR-CELLS FABRICATED BY ION-IMPLANTATION AND LASER ANNEALING
    ITOH, H
    TAMURA, H
    MIYAO, M
    WARABISAKO, T
    ITOH, K
    SASAKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 55 - 60
  • [36] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS
    GAT, A
    GIBBONS, JF
    APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144
  • [37] FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION-IMPLANTATION
    STONEHAM, EB
    PATTERSON, GA
    GLADSTONE, JM
    JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 371 - 383
  • [38] FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION-IMPLANTATION
    STONEHAM, EB
    PATTERSON, GA
    GLADSTONE, JM
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 143 - 147
  • [39] METASTABLE AS-CONCENTRATIONS IN SI ACHIEVED BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING
    LIETOILA, A
    GOLD, RB
    GIBBONS, JF
    SIGMON, TW
    SCOVELL, PD
    YOUNG, JM
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 230 - 232
  • [40] ELECTRICAL AND STRUCTURAL-PROPERTIES OF SILICON LAYERS HEAVILY DAMAGED BY ION-IMPLANTATION
    BOUSSEYSAID, J
    GHIBAUDO, G
    STOEMENOS, I
    ZAUMSEIL, P
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 61 - 68