THEORY OF THE FERMI-LEVEL ENERGY IN SEMICONDUCTOR SUPERLATTICES

被引:4
作者
LUSCOMBE, JH
AGGARWAL, R
REED, MA
FRENSLEY, WR
LUBAN, M
机构
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
[3] UNIV TEXAS,DEPT ELECT ENGN,RICHARDSON,TX 75083
[4] IOWA STATE UNIV SCI & TECHNOL,AMES LAB,AMES,IA 50011
[5] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS & ASTRON,AMES,IA 50011
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 11期
关键词
D O I
10.1103/PhysRevB.44.5873
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A theoretical study of the properties of the Fermi level in semiconductor superlattices (SL's) is made which is based upon the carrier occupation of the minibands in thermal equilibrium. We find, for a fixed carrier density and temperature, that the SL Fermi level can differ significantly from that obtained using commonly employed three-dimensional approximations, depending upon the relative spacings and widths of the minibands, with the SL Fermi level being higher than the corresponding bulk value. We find that the SL Fermi level is a sensitive function of the relative widths of the quantum wells and barriers.
引用
收藏
页码:5873 / 5876
页数:4
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