CHEMICAL-REACTIONS IN PLASMA DEPOSITION

被引：0
作者：
KAMPAS, FJ
机构：
来源：
SEMICONDUCTORS AND SEMIMETALS | 1984年 / 21卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：153 / 177
页数：25
相关论文
共 71 条
[1]   RATE CONSTANTS FOR REACTIONS OF HYDROGEN-ATOMS WITH SOME SILANES AND GERMANES [J].
AUSTIN, ER ;
LAMPE, FW .
JOURNAL OF PHYSICAL CHEMISTRY, 1977, 81 (12) :1134-1138
[2]  
BELL AT, 1974, TECHNIQUES APPLICATI, P31
[3]   THE 147-NM PHOTOLYSIS OF PHOSPHINE-SILANE MIXTURES [J].
BLAZEJOWSKI, J ;
LAMPE, FW .
JOURNAL OF PHOTOCHEMISTRY, 1981, 16 (02) :105-120
[4]   PYROLYSIS OF DISILANE AND RATE CONSTANTS OF SILENE INSERTION REACTIONS [J].
BOWREY, M ;
PURNELL, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 321 (1546) :341-&
[5]  
Brodsky M. H., 1980, IBM Technical Disclosure Bulletin, V22, P3391
[6]   DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE [J].
BRODSKY, MH .
THIN SOLID FILMS, 1977, 40 (JAN) :L23-L25
[7]   REACTION-MECHANISMS IN PLASMA DEPOSITION OF SIXC1-X-H FILMS [J].
CATHERINE, Y ;
TURBAN, G ;
GROLLEAU, B .
THIN SOLID FILMS, 1981, 76 (01) :23-33
[8]  
CATHERINE Y, 1982, PLASMA CHEM PLASMA P, V2, P81
[9]  
CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P156
[10]  
DALAL VK, 1981, TETRAHEDRALLY BONDED, P15
12345678