SURFACE-TREATMENT OF (1102) SAPPHIRE AND (100) SILICON FOR MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：16

作者：

CHRISTOU, A

RICHMOND, ED

WILKINS, BR

KNUDSON, AR

机构：

来源：

关键词：

D O I：

10.1063/1.94889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：796 / 798

页数：3

共 11 条

[1] BEAN JC, 1981, 1981 INT EL DEV M, P1
[2] BECKER GE, 1977, J APPL PHYS, V43, P3398
[3] SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON ON MOLECULAR-BEAM EPITAXIAL SILICON SI LAYERS
CHRISTOU, A
WILKINS, BR
DAVEY, JE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1021 - 1023
[4] CHRISTOU A, 1983, 1983 IEEE SOS SOI TE
[5] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +
[6] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183
[7] RICHMOND ED, 1983, 30TH NAT AVS S BOST
[8] RICHMOND ED, UNPUB J VAC SCI TECH
[9] GROWTH OF DISLOCATION-FREE SILICON FILMS BY MOLECULAR-BEAM EPITAXY (MBE)
SUGIURA, H
YAMAGUCHI, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 157 - 160
[10] TABE M, 1981, JPN J APPL PHYS, V21, P534