SURFACE-TREATMENT OF (1102) SAPPHIRE AND (100) SILICON FOR MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：16
作者：
CHRISTOU, A
RICHMOND, ED
WILKINS, BR
KNUDSON, AR
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期
关键词：
D O I：
10.1063/1.94889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：796 / 798
页数：3
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