PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：36

作者：

ELLIS, FB

GORDON, RG

PAUL, W

YACOBI, BG

机构：

[1] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138

[2] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4309 / 4317

页数：9

共 20 条

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[3]

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[4] SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE [J].

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[5]

ELLIS FB, 1983, THESIS HARVARD U

[6]

ELLIS FG, UNPUB

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[8] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1) [J].

GAU, SC ;

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[9] THERMAL DEHYDROGENATION OF GLOW-DISCHARGE A-SI [J].

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[10]

KNIGHTS JC, 1978, PHILOS MAG B, V37, P467, DOI 10.1080/01418637808225790

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