FABRICATION OF A DIAMOND FIELD EMITTER ARRAY

被引：139

作者：

OKANO, K ^{[1
]}

HOSHINA, K ^{[1
]}

IIDA, M ^{[1
]}

KOIZUMI, S ^{[1
]}

INUZUKA, T ^{[1
]}

机构：

[1] AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 20期

关键词：

D O I：

10.1063/1.111460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A diamond field emitter array has been fabricated. by Chemical vapor deposition. Diamond was grown on an inverted pyramidal-shape Si substrate followed by removal of the substrate. The fabricated array was placed in a high vacuum pumping system with the pressure of approximately 10(-7) Torr and the emission current as a function of the anode voltage was measured. The distance between the tungsten anode and the diamond surface was held constant at 100 mum throughout the measurement. As a result, a current larger than 10(-4) A was obtained for an anode voltage of 6 kV A linear relationship in the Fowler-Nordheim plot indicated the existence of electron field emission from the fabricated diamond field emitter array.

引用

页码：2742 / 2744

页数：3

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