STRUCTURAL-PROPERTIES OF DISLOCATIONS IN PLASTICALLY DEFORMED INP

被引：0
|
作者：
LUYSBERG, M
GERTHSEN, D
URBAN, K
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期
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T [工业技术];
学科分类号：
08 ;
摘要：
The dislocation structure induced by the uniaxial compression along the <123> direction was studied by high-resolution and conventional transmission electron microscopy (TEM). The evolution of the dislocation structure was investigated for samples deformed to the easy-glide region (stage I), the first work hardening stage (stage II) and the first recovery stage (stage III). The measurements of the dissociation widths yielded a stacking fault energy of 18.7+/-1.3mJ/m(2). Lattice images of edge dislocations were compared with simulated images.
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页码：63 / 66
页数：4
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