LOW-OPERATION-VOLTAGE COMB-SHAPED FIELD EMITTER ARRAY

被引：9

作者：

ITOH, J ^{[1
]}

TSUBURAYA, K ^{[1
]}

KANEMARU, S ^{[1
]}

WATANABE, T ^{[1
]}

ITOH, S ^{[1
]}

机构：

[1] FUTABA CORP,CHIBA 29943,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 7A期

关键词：

VACUUM MICROELECTRONICS; FIELD EMITTER ARRAY; LATERAL FIELD EMITTER ARRAY; COMB-SHAPED FIELD EMITTER ARRAY; FILM-EDGE FIELD EMITTER ARRAY;

D O I：

10.1143/JJAP.31.L884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of emission properties on the structure of comb-shaped lateral field emitter arrays (FEAs) has been investigated. The present FEA consists of an array of rectangular emitter tips with 3-mu-m-wide edges and a gate self-aligned to the emitter. It was found from experimental results that the ratio of pitch (=p) to edge width (=a) of the array had a strong influence on the emission properties, and that p/a approximately 3 was an optimum ratio to lower the operation voltage. Under this condition, an emission current of 1.4-mu-A/tip was obtained at a gate voltage of 110 V.

引用

页码：L884 / L886

页数：3

共 12 条

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