EXCITONS IN GAAS QUANTUM WELLS

被引：232

作者：

MILLER, RC

KLEINMAN, DA

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF LUMINESCENCE | 1985年 / 30卷 / 1-4期

关键词：

LUMINESCENCE - Applications - OPTICAL PROPERTIES;

D O I：

10.1016/0022-2313(85)90075-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A summary is presented of some of the salient properties of excitons in GaAs quantum wells. Topics discussed on the quasi-2D excitons in GaAs quantum wells include: their inherent tendency for intrinsic free-exciton emission, exciton binding energies, bound and localized excitons including biexcitons and excitons bound to neutral impurities, effects of n- and p-type modulation and antimodulation doping, and the developments leading to a proposed set of quantum well parameters that results in acceptable fits to the observed exciton transitions for GaAs quantum wells with both square and parabolic potential profiles.

引用

收藏

页码：520 / 540

页数：21

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